The purpose of this project is to develop novel applications of LETs in photonic integrated circuits (PICs).
Research Mentor
Yong Zhang (ECE)
Description
LETs are photo-conductive devices with suitable characteristics that can mimic the functionalities of FETs (field-effect transistors) but instead using light to modify the conductivity of the channel. LETs can potentially offer advantages over FETs in switching speed and switching energy. Furthermore, LETs provide unique functions that not available from FETs, for instance, multiple-beam gating, which allows for the realization of OR and AND logic function with a single LET, in turn, new and simplified circuit designs. This project will use LETs to construct an XOR gate that is the key component of a half adder or full adder in computing applications.
Fig.1 Schematic of LET, NOR and NAND gate constructed with LETs
REU Students’ Role
The student will help the circuit design and implement the design using discrete components to construct and characterize the circuit, and to demonstrate the intended functions. Background in electronic circuits and physics are expected.