Wei Gao

Education:

• Ph.D. in Electronic and Electrical Engineering, Abertay University, Dundee, Scotland, 1996
• M.Sc. Study of tungsten oxide reduction processes, General Research Institute for Non-ferrous Metals (GRINM), Beijing, China, 1985.
• B.S. in Solid State Physics and Materiasl Science, Tsinghua University, Beijing, China, 1982.

Research:

• Device physics and fabrication processes of
• Various types of solar cells
• II-VI semiconductor-based infrared materials and devices
• Si-based optoelectronic devices

Selected Publications:

1. W. Gao and S. Velicu, B. Benapfl, and H. Vemuri, F. Jin, A HgCdTe-based photodetector in low-flux spectroscopic lunar measurement, Presentation at II-VI workshop Chicago IL 2017
2. W. Gao, S. Velicu, C. Buurma, J. Park, S. Ketharanathan, Hyperspectral LWIR Imagers Based on Fabry-Perot Filters and HgCdTe Infrared Focal Plane Arrays Presentation at II-VI workshop Chicago IL 2015
3. W. Gao, T. K. Li, Y. Ono, and S. T. Hsu Photoluminescence and Electroluminescence Studies on Tb Doped Silicon Rich Oxide Materials and Devices, Journal of Rare Earths, 24 No. 6, December 2006.
4. W. Gao, J. F. Conley, Jr., and Y. Ono NbO as Gate Electrode for n‑channel Metal-Oxide-Semiconductor Field-Effect-Transistors, Appl. Phys. Letters, 84 (2004) 4666-4668.
5. W. Gao, Y. Ono, and J. Conley, Stacked Metal Layers as Gate for MOSFET Threshold Voltage Control, MRS proceeding 765 D1.4.1 (2003).
6. W. Gao, P. Liu, S. H. Lee, D. K. Benson, and H. M. Branz, Approaches for large-area a‑SiC:H photovoltaic-powered electrochromic window coatings. J. Non-Cryst. Solids, 266-269 1140-1144 (2000)
7. W Gao, S.-H. Lee, D. K. Benson, and H. M. Branz, Novel Electrochromic Projection and Writing Device Incorporating an Amorphous Silicon Carbide Photodiode, J. Non-Cryst. Solids, 266-269 1233-1237 (2000).
8. W. Gao, S. H. Lee, J. Bullock, Y. Xu, D. K. Benson, S. Morrison, and H. M. Branz, First a-SiC:H photovoltaic-powered monolithic tandem electrochromic smart window device. Solar Cell Material and Solar Energy. 59 243 (1999).
9. W. Gao, C. Main, S. Reynolds, R. Bruggemann, J. H. Zollondz, and R. Gibson, Evaluation of the DICE analysis method for a-Si:H pin devices. J. Non-Cryst. Solids. 198-200 1221(1996).
10. W. Gao, M. J. Carter, and R. Hill, A novel method of CdS deposition by chemical bath deposition. Proceedings of the 11^th European Photovoltaic Solar Energy Conference. P 921, 1992, Montreux, Switzerland.

issued patents:

1. 7,838,174 Gao; Wei, Ulrich; Bruce D., Ono; Yoshi, Droes; Steven R., Method of fabricating grayscale mask using smart cut ® wafer bonding process, November 23, 2010
2. 7,682,761 Gao; Wei, Ulrich; Bruce D., Ono; Yoshi, Method of fabricating a grayscale mask using a wafer bonding process, March 23, 2010
3. 7,400,020 Gao; Wei, Ono; Yoshi, Conductive niobium oxide gate MOSFET, July 15, 2008
4. 7,297,642 Gao; Wei, Li; Tingkai, Barrowcliff; Robert A., Ono; Yoshi, Hsu; Sheng Teng, Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications, November 20, 2007
5. 7,256,426 Li; Tingkai, Gao; Wei, Ono; Yoshi, Hsu; Sheng Teng, Rare earth element-doped silicon/silicon dioxide lattice structure, August 14, 2007
6. 7,129,552 Gao; Wei, Ono; Yoshi, MOSFET structures with conductive niobium oxide gates, October 31, 2006
7. 7,087,526 Zhuang; Wei-Wei, Gao; Wei, Ono; Yoshi, Method of fabricating a p-type CaO-doped SrCu2O2 thin film, August 8, 2006
8. 6,873,048 Gao; Wei, Conley, Jr.; John F., Ono; Yoshi, System and method for integrating multiple metal gates for CMOS applications, March 29, 2005
9. 6,861,712 Gao; Wei, Ono; Yoshi, MOSFET threshold voltage tuning with metal gate stack control, March 1, 2005
10. 6,825,106 Gao; Wei, Ono; Yoshi, Method of depositing a conductive niobium monoxide film for MOSFET gates, November 30, 2004