Electrical and Computer Engineering
- Ph.D. in Electronic and Electrical Engineering, Abertay University, Dundee, Scotland, 1996
- M.Sc. Study of tungsten oxide reduction processes, General Research Institute for Non-ferrous Metals (GRINM), Beijing, China, 1985.
- B.S. in Solid State Physics and Materiasl Science, Tsinghua University, Beijing, China, 1982.
- Device physics and fabrication processes of
- Various types of solar cells
- II-VI semiconductor-based infrared materials and devices
- Si-based optoelectronic devices
- W. Gao and S. Velicu, B. Benapfl, and H. Vemuri, F. Jin, A HgCdTe-based photodetector in low-flux spectroscopic lunar measurement, Presentation at II-VI workshop Chicago IL 2017
- W. Gao, S. Velicu, C. Buurma, J. Park, S. Ketharanathan, Hyperspectral LWIR Imagers Based on Fabry-Perot Filters and HgCdTe Infrared Focal Plane Arrays Presentation at II-VI workshop Chicago IL 2015
- W. Gao, T. K. Li, Y. Ono, and S. T. Hsu Photoluminescence and Electroluminescence Studies on Tb Doped Silicon Rich Oxide Materials and Devices, Journal of Rare Earths, 24 No. 6, December 2006.
- W. Gao, J. F. Conley, Jr., and Y. Ono NbO as Gate Electrode for n‑channel Metal-Oxide-Semiconductor Field-Effect-Transistors, Appl. Phys. Letters, 84 (2004) 4666-4668.
- W. Gao, Y. Ono, and J. Conley, Stacked Metal Layers as Gate for MOSFET Threshold Voltage Control, MRS proceeding 765 D1.4.1 (2003).
- W. Gao, P. Liu, S. H. Lee, D. K. Benson, and H. M. Branz, Approaches for large-area a‑SiC:H photovoltaic-powered electrochromic window coatings. J. Non-Cryst. Solids, 266-269 1140-1144 (2000)
- W Gao, S.-H. Lee, D. K. Benson, and H. M. Branz, Novel Electrochromic Projection and Writing Device Incorporating an Amorphous Silicon Carbide Photodiode, J. Non-Cryst. Solids, 266-269 1233-1237 (2000).
- W. Gao, S. H. Lee, J. Bullock, Y. Xu, D. K. Benson, S. Morrison, and H. M. Branz, First a-SiC:H photovoltaic-powered monolithic tandem electrochromic smart window device. Solar Cell Material and Solar Energy. 59 243 (1999).
- W. Gao, C. Main, S. Reynolds, R. Bruggemann, J. H. Zollondz, and R. Gibson, Evaluation of the DICE analysis method for a-Si:H pin devices. J. Non-Cryst. Solids. 198-200 1221(1996).
- W. Gao, M. J. Carter, and R. Hill, A novel method of CdS deposition by chemical bath deposition. Proceedings of the 11th European Photovoltaic Solar Energy Conference. P 921, 1992, Montreux, Switzerland.
- 7,838,174 Gao; Wei, Ulrich; Bruce D., Ono; Yoshi, Droes; Steven R., Method of fabricating grayscale mask using smart cut ® wafer bonding process, November 23, 2010
- 7,682,761 Gao; Wei, Ulrich; Bruce D., Ono; Yoshi, Method of fabricating a grayscale mask using a wafer bonding process, March 23, 2010
- 7,400,020 Gao; Wei, Ono; Yoshi, Conductive niobium oxide gate MOSFET, July 15, 2008
- 7,297,642 Gao; Wei, Li; Tingkai, Barrowcliff; Robert A., Ono; Yoshi, Hsu; Sheng Teng, Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications, November 20, 2007
- 7,256,426 Li; Tingkai, Gao; Wei, Ono; Yoshi, Hsu; Sheng Teng, Rare earth element-doped silicon/silicon dioxide lattice structure, August 14, 2007
- 7,129,552 Gao; Wei, Ono; Yoshi, MOSFET structures with conductive niobium oxide gates, October 31, 2006
- 7,087,526 Zhuang; Wei-Wei, Gao; Wei, Ono; Yoshi, Method of fabricating a p-type CaO-doped SrCu2O2 thin film, August 8, 2006
- 6,873,048 Gao; Wei, Conley, Jr.; John F., Ono; Yoshi, System and method for integrating multiple metal gates for CMOS applications, March 29, 2005
- 6,861,712 Gao; Wei, Ono; Yoshi, MOSFET threshold voltage tuning with metal gate stack control, March 1, 2005
- 6,825,106 Gao; Wei, Ono; Yoshi, Method of depositing a conductive niobium monoxide film for MOSFET gates, November 30, 2004